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SPEC NO: DSAN0650 REV NO: V.1A DATE: MAR/21/2011
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301000237
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No.
Dice
Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min.
Typ.
SA23-11YWA
Yellow (GaAsP/GaP)
White Diffused
21000
40000
*5600
*14000
Common Anode, Rt.
Hand Decimal
Parameter
Yellow
Units
Power dissipation
(DP)
300
(150)
mW
DC Forward Current
(DP)
30
(30)
mA
Peak Forward Current [1]
(DP)
140
(140)
mA
Reverse Voltage
(Per Chip)
5
(5)
V
Operating / Storage Temperature
-40°C To +85°C
Lead Solder Temperature[2]
260°C For 3-5 Seconds
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Device
Typ.
Max.
Units
Test Conditions
λpeak
Peak Wavelength
Yellow
590
nm
IF=20mA
λD [1]
Dominant Wavelength
Yellow
588
nm
IF=20mA
Δλ1/2
Spectral Line Half-width
Yellow
35
nm
IF=20mA
C
Capacitance
Yellow
20
pF
VF=0V;f=1MHz
VF
[2]
Forward Voltage
(DP)
Yellow
8.4
(4.2)
10.0
(5.0)
V
IF=20mA
IR
Reverse Current
(Per Chip)
Yellow
10
(10)
uA
VR=5V
(V
R=5V)
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